Chain-Scission Polyethers for EUV Lithography

EUV Lithography—The Successor to Optical Lithography?

This paper discusses the basic concepts and current state of development of EUV lithography (EUVL), a relatively new form of lithography that uses extreme ultraviolet (EUV) radiation with a wavelength in the range of 10 to 14 nanometer (nm) to carry out projection imaging. Currently, and for the last several decades, optical projection lithography has been the lithographic technique used in the...

Approach to EUV Lithography Simulation

Longer Wavelength EUV Lithography (LW-EUVL)

Extreme UV Lithography (EUVL) is generally accepted as the leading candidate for next generation lithography. Several challenges remain for EUVL, especially as its insertion point is pushed to finer resolution. Although diffractive scaling may suggest a transition to shorter EUVL wavelengths, several issues arise that would make that difficult. Challenges involve issues such as flare, multilaye...

Modeling and optimization of mass-limited targets for EUV Lithography

Current challenges in the development of efficient laser produced plasma (LPP) sources for EUV lithography are increasing EUV power at IF and maximizing lifetime and therefore, reducing cost of devices. Mass-limited targets such as small tin droplets are considered among the best choices for cleaner operation of the optical system because of lower mass of atomic debris produced by the laser bea...

Advances in computer simulations of LPP sources for EUV Lithography

Photon sources for extreme ultraviolet Lithography (EUVL) are still challenging problem to achieve high volume manufacture in the semiconductor industry. Currently EUVL community narrowed the research and developments to two directions: discharge produced plasma (DPP) assisted with trigger lasers and dual-pulse laser produced plasma (LPP) with mass-limited targets. Such complicated systems requ...